| PART |
Description |
Maker |
| D60VC60 D60VC100 D60VC120 D60VC80 D60VC40 |
Silicon-Twin-Rectifiers
|
Diotec Semiconductor
|
| MBR20045CTR |
High Power Schottky Rectifiers - Twin Tower Modules
|
America Semiconductor
|
| MBR12060CT MBR12060CTR |
High Power Schottky Rectifiers - Twin Tower Modules
|
America Semiconductor
|
| 530286-2 |
.100, .125, .150, .156 C/L Twin Leaf Mother Board Connectors; TWIN LEAF KEYING PLUG .150CL ( AMP )
|
Tyco Electronics
|
| UPA862TD-T3-A UPA862TD |
NPN SILICON RF TWIN TRANSISTOR
|
CEL[California Eastern Labs]
|
| BFS469L6 |
NPN Silicon RF TWIN Transistor
|
Infineon Technologies AG
|
| HTT1115EFTL-E HTT1115E |
Silicon NPN Epitaxial Twin Transistor
|
Renesas Electronics Corporation
|
| UPA835TF UPA835TF-T1 |
NPN SILICON EPITAXIAL TWIN TRANSISTOR
|
NEC
|
| DAN208 DAP208 |
Silicon-Twin Diodes Center tap
|
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
|
| UPA838TF-T1 UPA838TF |
NPN SILICON EPITAXIAL TWIN TRANSISTOR NPN硅外延双晶体
|
NEC, Corp.
NEC[NEC]
|
| 2SK1087 2SK1087-MR |
TV 99C 97#22D 2#8(TWIN) PN RE
N-CHANNEL SILICON POWER MOSFET
|
FUJI ELECTRIC CO LTD
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
http://
|
| M4A5 M1P5 M1P1 M2G9 M5D1 M5M1 M1F9 M1B5 M5B5 M7P9 |
MEDIUM CURRENT SILICON RECTIFIERS
(M2Kx) MEDIUM CURRENT SILICON RECTIFIERS
Header, Breakaway Vertical; Number of Contacts:2; Pitch Spacing:2.54mm; Number of Rows:1; Gender:Header; Series:42375; Body Material:PA Polyamide
KK 100 Hdr Assy Bkwy 30 Ckt Tin
MEDIUM CURRENT SILICON RECTIFIERS 中型电流硅整
|
List of Unclassifed Manufac...
EDAL
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
List of Unclassifed Man...
|
